AFIC31025NR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
AFIC31025NR1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-270-17 Variant, Flat Leads
Packaging
Tape & Reel (TR)
Published
2017
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Voltage - Rated
32V
Frequency
2.7GHz~3.1GHz
Transistor Type
LDMOS
Gain
30dB
RF/Microwave Device Type
NARROW BAND HIGH POWER
Power - Output
25W
RoHS Status
ROHS3 Compliant
In-Stock:143 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
500
$38.02564
$19012.82
AFIC31025NR1 Product Details
AFIC31025NR1 Description
The AFIC31025N integrated circuit has on-chip matching built in, allowing it to operate between 2400 and 3100 MHz. CW and pulse applications are supported by this multi-stage device.
AFIC31025NR1 Features
Matching using a chip (50 ohm input, DC blocked)
Built-in temperature correction for quiescent current with an enable/disable function
Capable of performing up to 32 VDD operations.
Integrated ESD defense
AFIC31025NR1 Applications
Radar in the civil s-band
Radar for weather and radar for shipping
Commercial heating
Links to data
Plasma production
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