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A2T18S262W12NR3

A2T18S262W12NR3

A2T18S262W12NR3

NXP USA Inc.

AIRFAST RF POWER LDMOS TRANSISTO

SOT-23

A2T18S262W12NR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Package / Case OM-880X-2L2L
PackagingTape & Reel (TR)
Published 2006
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Voltage - Rated 65V
Current Rating (Amps) 10μA
Peak Reflow Temperature (Cel) 260
Frequency 1.805GHz~1.88GHz
[email protected] Reflow Temperature-Max (s) 40
Current - Test 1.6A
Transistor Type LDMOS
Gain 19.3dB
Power - Output 231W
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:107 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$57.575760$57.57576
10$54.316755$543.16755
100$51.242221$5124.2221
500$48.341718$24170.859
1000$45.605395$45605.395

About A2T18S262W12NR3

The A2T18S262W12NR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features AIRFAST RF POWER LDMOS TRANSISTO.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the A2T18S262W12NR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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