A2I25H060NR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
A2I25H060NR1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-270-17 Variant, Flat Leads
Packaging
Tape & Reel (TR)
Published
2009
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Voltage - Rated
65V
Frequency
2.59GHz
Current - Test
26mA
Transistor Type
LDMOS (Dual)
Gain
26.1dB
Power - Output
10.5W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
In-Stock:4207 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$52.794303
$52.794303
10
$49.805947
$498.05947
100
$46.986742
$4698.6742
500
$44.327116
$22163.558
1000
$41.818033
$41818.033
A2I25H060NR1 Product Details
A2I25H060NR1 Description
The A2I25H060NR1 wideband integrated circuit is an asymmetrical Doherty designed with chip-mapping technology that makes it usable from 2.3 MHz to 2690 MHz. This multi-stage structure supports all common cellular base station modulation formats and is rated for 20 to 32 V operation.
A2I25H060NR1 Features
Doherty Advanced High Performance In-Package
On-Chip Matching (DC Blocked, 50 Ohm Input)
Enable/Disable Function (2) and Integrated Quiescent Current Temperature Compensation
Incorporated into Digital Predistortion Error Correction Systems
A2I25H060NR1 Applications
Switching applications
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