A2I25H060GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
A2I25H060GNR1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-270-17 Variant, Gull Wing
Packaging
Tape & Reel (TR)
Published
2009
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Voltage - Rated
65V
Reach Compliance Code
not_compliant
Frequency
2.59GHz
Current - Test
26mA
Transistor Type
LDMOS (Dual)
Gain
26.1dB
Power - Output
10.5W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
In-Stock:4347 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$268.207280
$268.20728
10
$253.025736
$2530.25736
100
$238.703524
$23870.3524
500
$225.192004
$112596.002
1000
$212.445287
$212445.287
A2I25H060GNR1 Product Details
A2I25H060GNR1 Description
Asymmetrical Doherty developed with chip-mapping technology, the A2I25H060GNR1 wideband integrated circuit can operate between 2.3 MHz and 2690 MHz. This multi-stage structure is rated for 20 to 32 V operation and supports all popular cellular base station modulation formats.
A2I25H060GNR1 Features
Doherty High Performance Advanced In-Package
Matching on-Chip (DC Blocked, 50 Ohm Input)
Integrated Quiescent Current Temperature Compensation and the Enable/Disable Function (2)
Digital Predistortion Error Correction Systems incorporate this technology
A2I25H060GNR1 Applications
Switching applications
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