A2I25D025GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
A2I25D025GNR1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-270-17 Variant, Gull Wing
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated
65V
HTS Code
8542.33.00.01
Peak Reflow Temperature (Cel)
260
Frequency
2.69GHz
[email protected] Reflow Temperature-Max (s)
40
Current - Test
59mA
Transistor Type
LDMOS (Dual)
Gain
31.9dB
Power - Output
3.2W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
In-Stock:301 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
500
$29.74066
$14870.33
A2I25D025GNR1 Product Details
A2I25D025GNR1 Description
The A2I25D025GNR1 wideband integrated circuit has on-chip matching built in, allowing it to operate between 2100 and 2900 MHz. This multi-stage construction can accommodate all common modulation formats used by cellular base stations and is rated for 26 to 32 V operation.
A2I25D025GNR1 Features
At-Chip Matching (50 Ohm Input, DC Blocked)
Compensated for Integrated Quiescent Current Temperature
Activate/Deactivate Function
Created for Doherty Applications Designed for Digital Predistortion Error Correction Systems
A2I25D025GNR1 Applications
Switching applications
Related Products
Similar Transistors - FETs, MOSFETs - RF from NXP USA Inc. and other manufacturers
