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A2G22S160-01SR3

A2G22S160-01SR3

A2G22S160-01SR3

NXP USA Inc.

AIRFAST RF Power GaN Transistor, 1800-2200 MHz, 32 W AVG., 48 V

SOT-23

A2G22S160-01SR3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Package / Case NI-400S-2S
PackagingTape & Reel (TR)
Published 2006
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 125V
HTS Code8541.29.00.75
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 2.11GHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 150mA
Gain 19.6dB
Power - Output 32W
Voltage - Test 48V
RoHS StatusROHS3 Compliant
In-Stock:300 items

Pricing & Ordering

QuantityUnit PriceExt. Price
250$115.14768$28786.92

About A2G22S160-01SR3

The A2G22S160-01SR3 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features AIRFAST RF Power GaN Transistor, 1800-2200 MHz, 32 W AVG., 48 V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the A2G22S160-01SR3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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