IPB065N15N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IPB065N15N3GATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins
7
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
OptiMOS™
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G6
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
300W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 270μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
7300pF @ 75V
Current - Continuous Drain (Id) @ 25°C
130A Tc
Gate Charge (Qg) (Max) @ Vgs
93nC @ 10V
Rise Time
35ns
Drive Voltage (Max Rds On,Min Rds On)
8V 10V
Vgs (Max)
±20V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
46 ns
Continuous Drain Current (ID)
130A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
150V
Drain-source On Resistance-Max
0.0065Ohm
Pulsed Drain Current-Max (IDM)
520A
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:1004 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.125120
$7.12512
10
$6.721811
$67.21811
100
$6.341331
$634.1331
500
$5.982388
$2991.194
1000
$5.643762
$5643.762
IPB065N15N3GATMA1 Product Details
IPB065N15N3GATMA1 Description
The IPB065N15N3GATMA1 OptiMOS? 3 Power-Transistor achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS? part.
IPB065N15N3GATMA1 Features
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant-halogen free
MSL1 rated 2
Excellent switching performance
World's lowest RDS(on)
Very low Qg and Qgd
IPB065N15N3GATMA1 Applicaitons
Isolated DC-DC converters (telecom and datacom systems)
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Synchronous rectification for AC-DC SMPS
Motor control for 48V–8 0V systems
Uninterruptable power supplies (UPS)
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