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PMZB350UPE,315

PMZB350UPE,315

PMZB350UPE,315

Nexperia USA Inc.

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 450m Ω @ 300mA, 4.5V ±8V 127pF @ 10V 1.9nC @ 4.5V 20V 3-XFDFN

SOT-23

PMZB350UPE,315 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count3
Power Dissipation-Max 360mW Ta 3.125W Tc
Turn On Delay Time4 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 450m Ω @ 300mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 127pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 1.9nC @ 4.5V
Rise Time5ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage-20V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:16319 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.411575$0.411575
10$0.388278$3.88278
100$0.366300$36.63
500$0.345566$172.783
1000$0.326005$326.005

PMZB350UPE,315 Product Details

PMZB350UPE,315 Overview


A device's maximum input capacitance is 127pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 26 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Powered by -20V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

PMZB350UPE,315 Features


a continuous drain current (ID) of 1A
the turn-off delay time is 26 ns
a 20V drain to source voltage (Vdss)


PMZB350UPE,315 Applications


There are a lot of Nexperia USA Inc.
PMZB350UPE,315 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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