NVMFS5C404NLAFT1G Description
The NVMFS5C404NLAFT1G is a MOSFET – Power, Single N-Channel 40 V, 0.67 m, 370 A. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly the same thing as a MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.
NVMFS5C404NLAFT1G Features
NVMFS5C404NLWF ? Wettable Flank Option for Enhanced Optical Inspection
AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C404NLAFT1G Applications
Switch Mode Power Supplies (SMPS)
Residential, commercial, architectural and street lighting
DC-DC converters
Motor control
Automotive applications
