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PHB32N06LT,118

PHB32N06LT,118

PHB32N06LT,118

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 37m Ω @ 20A, 10V ±15V 1280pF @ 25V 17nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

PHB32N06LT,118 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series TrenchMOS™
Published 2009
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Voltage 60V
Power Dissipation-Max 97W Tc
Element ConfigurationSingle
Current 29A
Operating ModeENHANCEMENT MODE
Power Dissipation97W
Case Connection DRAIN
Turn On Delay Time14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 25V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Rise Time120ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 5V
Vgs (Max) ±15V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 34A
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage60V
Drain to Source Breakdown Voltage 60V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5747 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.168430$1.16843
10$1.102292$11.02292
100$1.039898$103.9898
500$0.981036$490.518
1000$0.925506$925.506

PHB32N06LT,118 Product Details

PHB32N06LT,118 Overview


The maximum input capacitance of this device is 1280pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 34A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 45 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 60V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 5V), this device helps reduce its power consumption.

PHB32N06LT,118 Features


a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 45 ns


PHB32N06LT,118 Applications


There are a lot of Nexperia USA Inc.
PHB32N06LT,118 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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