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IRLML6302TRPBF

IRLML6302TRPBF

IRLML6302TRPBF

Infineon Technologies

MOSFET P-CH 20V 780MA SOT-23

SOT-23

IRLML6302TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier Micro3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 600mOhm
Additional FeatureLOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating-620mA
Number of Elements 1
Power Dissipation-Max 540mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation540mW
Turn On Delay Time13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 610mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 97pF @ 15V
Current - Continuous Drain (Id) @ 25°C 780mA Ta
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.45V
Rise Time18ns
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) -780mA
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.78A
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Nominal Vgs -1.5 V
Min Breakdown Voltage 20V
Height 1.016mm
Length 3.0226mm
Width 1.397mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:12752 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.184347$0.184347
10$0.173912$1.73912
100$0.164068$16.4068
500$0.154781$77.3905
1000$0.146020$146.02

About IRLML6302TRPBF

The IRLML6302TRPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 20V 780MA SOT-23.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRLML6302TRPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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