PBSS5160QAZ Overview
This device has a DC current gain of 85 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 460mV @ 50mA, 1A.An input voltage of 60V volts is the breakdown voltage.A maximum collector current of 1A volts can be achieved.
PBSS5160QAZ Features
the DC current gain for this device is 85 @ 1A 2V
the vce saturation(Max) is 460mV @ 50mA, 1A
PBSS5160QAZ Applications
There are a lot of Nexperia USA Inc. PBSS5160QAZ applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
