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MPSW92G

MPSW92G

MPSW92G

ON Semiconductor

MPSW92G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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MPSW92G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2010
JESD-609 Code e1
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code8541.29.00.75
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating-500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MPSW92
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Transistor Application SWITCHING
Gain Bandwidth Product50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA 10V
Current - Collector Cutoff (Max) 250nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage300V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 50MHz
Collector Emitter Saturation Voltage-500mV
Collector Base Voltage (VCBO) -300V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1606 items

MPSW92G Product Details

MPSW92G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 30mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.A maximum collector current of 500mA volts is possible.

MPSW92G Features


the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz

MPSW92G Applications


There are a lot of ON Semiconductor MPSW92G applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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