Dual N-Channel 60 V 330 mW 0.8 nC Silicon Surface Mount Mosfet - SOT-666
SOT-23
2N7002PV,115 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Additional Feature
LOGIC LEVEL COMPATIBLE
Max Power Dissipation
330mW
Terminal Form
FLAT
Pin Count
6
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
390mW
Turn On Delay Time
3 ns
Power - Max
330mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
0.8nC @ 4.5V
Rise Time
4ns
Fall Time (Typ)
5 ns
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
350mA
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Drain Current-Max (Abs) (ID)
0.35A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:17044 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2N7002PV,115 Product Details
Description:
The Nexperia 2N7002PV,115 is a dual N-channel 60 V 330 mW 0.8 nC silicon surface mount MOSFET in a SOT-666 package. It is designed for use in low voltage, low power applications such as power management, motor control, and switching applications.
Features: • Low on-resistance • Low gate charge • Low input capacitance • Low threshold voltage • High speed switching • High power density • High current handling capability • RoHS compliant
Applications: • Power management • Motor control • Switching applications • Automotive applications • Industrial applications • Consumer electronics
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