Welcome to Hotenda.com Online Store!

logo
userjoin
Home

JANTX2N918UB

JANTX2N918UB

JANTX2N918UB

Microsemi Corporation

JANTX2N918UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N918UB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact PlatingLead, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/301
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.21.00.95
Max Power Dissipation200mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Reference Standard MIL-19500/301H
JESD-30 Code R-CDSO-N3
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3mA 1V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage15V
Collector Base Voltage (VCBO) 30V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 3pF
RoHS StatusNon-RoHS Compliant
In-Stock:262 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$32.43350$3243.35

JANTX2N918UB Product Details

JANTX2N918UB Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 3mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 1mA, 10mA.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.

JANTX2N918UB Features


the DC current gain for this device is 20 @ 3mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA

JANTX2N918UB Applications


There are a lot of Microsemi Corporation JANTX2N918UB applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

Get Subscriber

Enter Your Email Address, Get the Latest News