2N2270 Overview
This design offers maximum flexibility with a collector emitter saturation voltage of 900mV.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 1A volts is possible.
2N2270 Features
a collector emitter saturation voltage of 900mV
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
2N2270 Applications
There are a lot of Central Semiconductor
2N2270 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
