2N6040 Overview
This device has a DC current gain of 1000 @ 4A 4V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 16mA, 4A.A 8A continuous collector voltage is necessary to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -8A.In the part, the transition frequency is 4MHz.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
2N6040 Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz
2N6040 Applications
There are a lot of ON Semiconductor 2N6040 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
