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JAN2N6287

JAN2N6287

JAN2N6287

Microsemi Corporation

JAN2N6287 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N6287 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Contact PlatingLead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Transistor Element Material SILICON
Operating Temperature-65°C~175°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/505
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusQualified
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 175W
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 1250 @ 10A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 200mA, 20A
Current - Collector (Ic) (Max) 20A
Transition Frequency 4MHz
Collector Emitter Saturation Voltage3V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
RoHS StatusNon-RoHS Compliant
In-Stock:165 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$60.66690$6066.69

JAN2N6287 Product Details

JAN2N6287 Overview


In this device, the DC current gain is 1250 @ 10A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.

JAN2N6287 Features


the DC current gain for this device is 1250 @ 10A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz

JAN2N6287 Applications


There are a lot of Microsemi Corporation JAN2N6287 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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