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JAN2N5681

JAN2N5681

JAN2N5681

Microsemi Corporation

JAN2N5681 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N5681 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Contact PlatingLead, Tin
Mount Through Hole
PackagingBulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature200°C
Min Operating Temperature -65°C
HTS Code8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count2
Reference Standard MIL-19500/583
JESD-30 Code O-MBCY-W3
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1A
JEDEC-95 Code TO-205AD
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 100V
DC Current Gain-Min (hFE) 5
RoHS StatusNon-RoHS Compliant
In-Stock:368 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$28.81680$2881.68

JAN2N5681 Product Details

JAN2N5681 Overview


As you can see, the part has a transition frequency of 30MHz.Collector current can be as low as 1A volts at its maximum.

JAN2N5681 Features


a transition frequency of 30MHz

JAN2N5681 Applications


There are a lot of Microsemi Corporation JAN2N5681 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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