Welcome to Hotenda.com Online Store!

logo
userjoin
Home

JAN2N5667

JAN2N5667

JAN2N5667

Microsemi Corporation

JAN2N5667 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N5667 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/455
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation1.2W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation1.2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 5V
Current - Collector Cutoff (Max) 200nA
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 5A
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:663 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$15.506000$15.506
10$14.628302$146.28302
100$13.800285$1380.0285
500$13.019137$6509.5685
1000$12.282204$12282.204

JAN2N5667 Product Details

JAN2N5667 Overview


This device has a DC current gain of 25 @ 1A 5V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 6V can achieve high levels of efficiency.In extreme cases, the collector current can be as low as 5A volts.

JAN2N5667 Features


the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
the emitter base voltage is kept at 6V

JAN2N5667 Applications


There are a lot of Microsemi Corporation JAN2N5667 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

Get Subscriber

Enter Your Email Address, Get the Latest News