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2N3467

2N3467

2N3467

Microsemi Corporation

2N3467 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3467 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-39
Number of Pins 3
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature175°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count2
Number of Elements 1
Polarity PNP
Configuration SINGLE
Power Dissipation1W
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1A
JEDEC-95 Code TO-205AD
Transition Frequency 175MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
DC Current Gain-Min (hFE) 40
Turn Off Time-Max (toff) 90ns
Turn On Time-Max (ton) 40ns
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:821 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.42000$3.42
10$3.04900$30.49
25$2.74440$68.61
100$2.50030$250.03
250$2.25640$564.1
500$2.02466$1012.33

2N3467 Product Details

2N3467 Overview


Keeping the emitter base voltage at 5V allows for a high level of efficiency.A transition frequency of 175MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

2N3467 Features


the emitter base voltage is kept at 5V
a transition frequency of 175MHz

2N3467 Applications


There are a lot of Microsemi Corporation 2N3467 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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