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JAN2N3767

JAN2N3767

JAN2N3767

Microsemi Corporation

JAN2N3767 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3767 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Surface Mount
Package / Case TO-213AA, TO-66-2
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/518
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation25W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Pin Count3
Reference Standard MIL-19500/518C
JESD-30 Code O-MBFM-P2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 5V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 100mA, 1A
Current - Collector (Ic) (Max) 4A
Transition Frequency 10MHz
Collector Base Voltage (VCBO) 100V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:281 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$32.35050$3235.05

JAN2N3767 Product Details

JAN2N3767 Overview


DC current gain in this device equals 40 @ 500mA 5V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Parts of this part have transition frequencies of 10MHz.In extreme cases, the collector current can be as low as 4A volts.

JAN2N3767 Features


the DC current gain for this device is 40 @ 500mA 5V
the vce saturation(Max) is 2.5V @ 100mA, 1A
a transition frequency of 10MHz

JAN2N3767 Applications


There are a lot of Microsemi Corporation JAN2N3767 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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