JAN2N6059 Overview
This device has a DC current gain of 1000 @ 6A 3V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 5V can achieve high levels of efficiency.
JAN2N6059 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JAN2N6059 Applications
There are a lot of Microsemi Corporation JAN2N6059 applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
