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JAN2N3762

JAN2N3762

JAN2N3762

Microsemi Corporation

JAN2N3762 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3762 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/396
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 1A 1.5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 900mV @ 100mA, 1A
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:1058 items

JAN2N3762 Product Details

JAN2N3762 Overview


This device has a DC current gain of 30 @ 1A 1.5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 900mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.A maximum collector current of 1.5A volts is possible.

JAN2N3762 Features


the DC current gain for this device is 30 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the emitter base voltage is kept at 5V

JAN2N3762 Applications


There are a lot of Microsemi Corporation JAN2N3762 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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