2SB1203T-E Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at -6V for high efficiency.A transition frequency of 130MHz is present in the part.In extreme cases, the collector current can be as low as 5A volts.
2SB1203T-E Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 550mV @ 150mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz
2SB1203T-E Applications
There are a lot of ON Semiconductor 2SB1203T-E applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
