JAN2N3637 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 50mA 10V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N3637 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
JAN2N3637 Applications
There are a lot of Microsemi Corporation JAN2N3637 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
