JANTX2N4449 Overview
In this device, the DC current gain is 20 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 10mA, 100mA.In this part, there is a transition frequency of 500MHz.Collector Emitter Breakdown occurs at 20VV - Maximum voltage.
JANTX2N4449 Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
a transition frequency of 500MHz
JANTX2N4449 Applications
There are a lot of Microsemi Corporation JANTX2N4449 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
