JAN2N3486A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
JAN2N3486A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
JAN2N3486A Applications
There are a lot of Microsemi Corporation JAN2N3486A applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
