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US6T5TR

US6T5TR

US6T5TR

ROHM Semiconductor

US6T5TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

US6T5TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Base Part Number US6T
Pin Count6
Number of Elements 1
Element ConfigurationSingle
Power - Max 400mW
Transistor Application AMPLIFIER
Gain Bandwidth Product280MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 370mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage30V
Current - Collector (Ic) (Max) 2A
Transition Frequency 280MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1925 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.394023$0.394023
10$0.371721$3.71721
100$0.350680$35.068
500$0.330830$165.415
1000$0.312103$312.103

US6T5TR Product Details

US6T5TR Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 6V for high efficiency.280MHz is present in the transition frequency.A maximum collector current of 2A volts can be achieved.

US6T5TR Features


the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz

US6T5TR Applications


There are a lot of ROHM Semiconductor US6T5TR applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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