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APTGT75A1202G

APTGT75A1202G

APTGT75A1202G

Microsemi Corporation

Trans IGBT Module N-CH 1.2KV 110A 18-Pin Case SP-2

SOT-23

APTGT75A1202G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP2
Number of Pins 18
Operating Temperature-40°C~150°C TJ
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation357W
Configuration Half Bridge
Element ConfigurationDual
Power - Max 357W
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 110A
Current - Collector Cutoff (Max) 50μA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance5.34nF
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
IGBT Type Trench Field Stop
NTC ThermistorNo
Input Capacitance (Cies) @ Vce 5.34nF @ 25V
RoHS StatusRoHS Compliant
In-Stock:2132 items

About APTGT75A1202G

The APTGT75A1202G from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans IGBT Module N-CH 1.2KV 110A 18-Pin Case SP-2.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the APTGT75A1202G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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