IRG5K200HF12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG5K200HF12B Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 62 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.25kW
Configuration
Half Bridge
Power - Max
1250W
Input
Standard
Collector Emitter Voltage (VCEO)
2.6V
Max Collector Current
400A
Current - Collector Cutoff (Max)
2mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
26nF
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 200A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
26nF @ 25V
RoHS Status
RoHS Compliant
In-Stock:3607 items
IRG5K200HF12B Product Details
IRG5K200HF12B Description
IRG5K200HF12B is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. IRG5K200HF12B operates between -40°C~150°C TJ, and its Max Collector Current is 400A. The IRG5K200HF12B has 3 pins and it is available in Tube packaging way. IRG5K200HF12B has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
IRG5K200HF12B Features
Input Capacitance (Cies) @ Vce: 26nF @ 25V
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max): 1200V
Collector Emitter Voltage (VCEO): 2.6V
Collector Emitter Breakdown Voltage: 1.2kV
IRG5K200HF12B Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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