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APTGT100BB60T3G

APTGT100BB60T3G

APTGT100BB60T3G

Microsemi Corporation

IGBT MODULE 600V 150A 340W SP3

SOT-23

APTGT100BB60T3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 36 Weeks
Mount Screw, Through Hole
Mounting Type Through Hole
Package / Case SP3
Number of Pins 16
Operating Temperature-40°C~175°C TJ
Published 2012
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation340W
Number of Elements 1
Configuration Half Bridge
Element ConfigurationDual
Power - Max 340W
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 150A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage600V
Input Capacitance6.1nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 100A
IGBT Type Trench Field Stop
NTC ThermistorYes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.1nF @ 25V
VCEsat-Max 1.9 V
RoHS StatusRoHS Compliant
In-Stock:151 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$44.22480$4422.48

About APTGT100BB60T3G

The APTGT100BB60T3G from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT MODULE 600V 150A 340W SP3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the APTGT100BB60T3G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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