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APT45GR65BSCD10

APT45GR65BSCD10

APT45GR65BSCD10

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

SOT-23

APT45GR65BSCD10 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2001
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation543W
Input Type Standard
Power - Max 543W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 118A
Reverse Recovery Time 80 ns
Collector Emitter Breakdown Voltage650V
Test Condition 433V, 45A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 45A
IGBT Type NPT
Gate Charge203nC
Current - Collector Pulsed (Icm) 224A
Td (on/off) @ 25°C 15ns/100ns
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS StatusRoHS Compliant
In-Stock:4497 items

About APT45GR65BSCD10

The APT45GR65BSCD10 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features INSULATED GATE BIPOLAR TRANSISTO.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the APT45GR65BSCD10, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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