IRG7CH81K10EF Description
This IGBT gadget was created employing a cutting-edge, exclusive trench gate and field stop structure. The component is an IGBT from the "V" series, which offers the best balance between conduction and switching losses to enhance the efficiency of very high frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat) temperature coefficient and a very narrow parameter distribution.
IRG7CH81K10EF Features
Low switching and VCE(ON) Losses
Maximum Junction Temperature of 175 °C and Square RBSOA
performance as well as increased power capacity
VCE (ON) Temperature Coefficient is positive
Built-in Gate Resistor
IRG7CH81K10EF Applications
Drives with Medium Power
UPS
The HEV Inverter
Welding
