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APT25SM120S

APT25SM120S

APT25SM120S

Microsemi Corporation

POWER MOSFET - SIC

SOT-23

APT25SM120S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mounting Type Chassis Mount
Package / Case D-3 Module
Surface MountYES
Operating Temperature-55°C~175°C TJ
PackagingBulk
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology SiCFET (Silicon Carbide)
Configuration Single
Power Dissipation-Max 175W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 175m Ω @ 10A, 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Continuous Drain Current (ID) 25A
RoHS StatusRoHS Compliant
In-Stock:4830 items

About APT25SM120S

The APT25SM120S from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features POWER MOSFET - SIC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the APT25SM120S, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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