TPS1101DG4 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.3A amps.In this device, the drain-source breakdown voltage is 15V and VGS=15V, so the drain-source breakdown voltage is 15V in this case.It is [19 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 90mOhm.A turn-on delay time of 6.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 2V.To operate this transistor, you will need a -15V drain to source voltage (Vdss).
TPS1101DG4 Features
a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of 15V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 90mOhm
a -15V drain to source voltage (Vdss)
TPS1101DG4 Applications
There are a lot of Texas Instruments
TPS1101DG4 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
