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2N3737

2N3737

2N3737

Microsemi Corporation

2N3737 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3737 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AB, TO-46-3 Metal Can
Number of Pins 3
Supplier Device Package TO-46-3
Operating Temperature-65°C~200°C TJ
PackagingBulk
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature200°C
Min Operating Temperature -65°C
Max Power Dissipation500mW
Power - Max 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 900mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 1.5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 900mV @ 100mA, 1A
Collector Emitter Breakdown Voltage40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 1.5A
Collector Base Voltage (VCBO) 75V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:1838 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$14.20860$1420.86

2N3737 Product Details

2N3737 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 1A 1.5V.A VCE saturation (Max) of 900mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Product comes in the supplier's device package TO-46-3.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.A maximum collector current of 1.5A volts can be achieved.

2N3737 Features


the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the supplier device package of TO-46-3

2N3737 Applications


There are a lot of Microsemi Corporation 2N3737 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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