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MJD5731T4

MJD5731T4

MJD5731T4

Rochester Electronics, LLC

POWER BIPOLAR TRANSISTOR, PNP

SOT-23

MJD5731T4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.56W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Voltage - Collector Emitter Breakdown (Max) 350V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 10MHz
RoHS StatusNon-RoHS Compliant
In-Stock:4991 items

About MJD5731T4

The MJD5731T4 from Rochester Electronics, LLC is a high-performance microcontroller designed for a wide range of embedded applications. This component features POWER BIPOLAR TRANSISTOR, PNP.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MJD5731T4, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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