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2N3507

2N3507

2N3507

Microsemi Corporation

2N3507 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3507 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact PlatingLead, Tin
Mount Through Hole
Package / Case TO-39
Number of Pins 3
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature200°C
Min Operating Temperature -65°C
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count2
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation1W
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
Transition Frequency 60MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
DC Current Gain-Min (hFE) 20
Turn Off Time-Max (toff) 90ns
Turn On Time-Max (ton) 45ns
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:295 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$24.50340$2450.34

2N3507 Product Details

2N3507 Overview


An emitter's base voltage can be kept at 5V to gain high efficiency.A transition frequency of 60MHz is present in the part.In extreme cases, the collector current can be as low as 3A volts.

2N3507 Features


the emitter base voltage is kept at 5V
a transition frequency of 60MHz

2N3507 Applications


There are a lot of Microsemi Corporation 2N3507 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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