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JANTX1N5809CB

JANTX1N5809CB

JANTX1N5809CB

Microsemi

SOT-23

JANTX1N5809CB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 110
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 6
Peak Non-Repetitive Surge Current (A) 125
Peak Forward Voltage (V) 0.875@4A
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 30
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
AEC Qualified No
Standard Package Name Case E
Supplier Package Case E
Mounting Through Hole
Package Length 4.7(Max)
PCB changed 2
Lead Shape Through Hole
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
Diameter 3.42(Max)
RoHS StatusRoHS non-compliant
In-Stock:3121 items

JANTX1N5809CB Product Details

JANTX1N5809CB Overview


According to the datasheets, the peak forward voltage is [email protected] maximum continuous forward current that this device consumes at any given time is about 6.A DC reverse voltage less than 110 must be used for operation.

JANTX1N5809CB Features


the forward peak voltage is 0.875@4A


JANTX1N5809CB Applications


There are a lot of Microsemi
JANTX1N5809CB applications of RF diodes.


  • Sensor interfaces of security systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables

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