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ESH2DHM4G

ESH2DHM4G

ESH2DHM4G

Taiwan Semiconductor

RECTIFIER DIODE SILICON NOT SPECIFIED DUAL Tape and Reel

SOT-23

ESH2DHM4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Diode Element Material SILICON
Number of Terminals 2
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 200
Peak Reverse Repetitive Voltage (V) 200
Maximum Continuous Forward Current (A) 2
Peak Non-Repetitive Surge Current (A) 60
Peak Forward Voltage (V) 0.9
Peak Reverse Current (uA) 2
Peak Reverse Recovery Time (ns) 20
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Supplier Package SMB
Military No
Mounting Surface Mount
Package Height 2.41(Max)
Package Length 4.75(Max)
Package Width 3.73(Max)
PCB changed 2
Lead Shape Inward L-Lead
Manufacturer Taiwan Semiconductor
Package Shape RECTANGULAR
PackagingTape and Reel
JESD-609 Code e3
Part StatusObsolete
ECCN Code EAR99
Type Switching Diode
Terminal Finish Matte Tin (Sn)
HTS Code8541.10.00.80
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count2
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-C2
Number of Elements 1
Configuration Single
Diode Type RECTIFIER DIODE
Output Current-Max 2 A
Application EFFICIENCY
Number of Phases 1
Rep Pk Reverse Voltage-Max 200 V
JEDEC-95 Code DO-214AA
Non-rep Pk Forward Current-Max 60 A
Reverse Current-Max 2 µA
Reverse Recovery Time-Max 0.02 µs
RoHS StatusYes with exemptions
In-Stock:4591 items

ESH2DHM4G Product Details

ESH2DHM4G Overview


The peak forward voltage on the datasheets is 0.9.Normally, this device consumes about 2 of continuous forward current.During operation, DC reverse voltage must not exceed 200.Using this device, it is possible to read a maximum output current voltage of 2 A.

ESH2DHM4G Features


the forward peak voltage is 0.9
a maximum output current voltage of 2 A


ESH2DHM4G Applications


There are a lot of Taiwan Semiconductor
ESH2DHM4G applications of RF diodes.


  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer

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