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1N5806JANTX

1N5806JANTX

1N5806JANTX

Microsemi

Bag

SOT-23

1N5806JANTX Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 160
Peak Reverse Repetitive Voltage (V) 150
Maximum Continuous Forward Current (A) 2.5
Peak Non-Repetitive Surge Current (A) 35
Peak Forward Voltage (V) 0.975
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 25
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
AEC Qualified No
Standard Package Name Module
Supplier Package Case A
Mounting Through Hole
Package Length 6.35(Max)
PCB changed 2
Lead Shape Through Hole
PackagingBag
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
Diameter 2.16(Max)
RoHS StatusRoHS non-compliant
In-Stock:2180 items

1N5806JANTX Product Details

1N5806JANTX Overview


In the datasheets, 0.975 is stated as the peak forward voltage.A continuous forward current of 2.5 is the maximum consumption of this device.RF diode is necessary to operate the device at a DC reverse voltage below 160.

1N5806JANTX Features


the forward peak voltage is 0.975


1N5806JANTX Applications


There are a lot of Microsemi
1N5806JANTX applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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