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DATA-1N5550JANTX

DATA-1N5550JANTX

DATA-1N5550JANTX

Microsemi

Bag

SOT-23

DATA-1N5550JANTX Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 220
Peak Reverse Repetitive Voltage (V) 200
Maximum Continuous Forward Current (A) 5
Peak Non-Repetitive Surge Current (A) 100
Peak Forward Voltage (V) 1.2@9A
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 2000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Standard Package Name Case E
Supplier Package Case E
Mounting Through Hole
Package Length 4.7(Max)
PCB changed 2
Lead Shape Through Hole
PackagingBag
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
Diameter 3.42(Max)
RoHS StatusRoHS non-compliant
In-Stock:2374 items

DATA-1N5550JANTX Product Details

DATA-1N5550JANTX Overview


In the datasheets, 1.2@9A is stated as the peak forward voltage.A continuous forward current of 5 is the maximum consumption of this device.RF diode is necessary to operate the device at a DC reverse voltage below 220.

DATA-1N5550JANTX Features


the forward peak voltage is 1.2@9A


DATA-1N5550JANTX Applications


There are a lot of Microsemi
DATA-1N5550JANTX applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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