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1N5552E3

1N5552E3

1N5552E3

Microsemi

Bag

SOT-23

1N5552E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 660
Peak Reverse Repetitive Voltage (V) 600
Maximum Continuous Forward Current (A) 5
Peak Non-Repetitive Surge Current (A) 100
Peak Forward Voltage (V) 1.2@9A
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 2000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Commercial
AEC Qualified No
Standard Package Name Case B
Supplier Package Case B
Military No
Mounting Through Hole
Package Length 3.05(Max)
PCB changed 2
Lead Shape Through Hole
PackagingBag
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
Diameter 1.65(Max)
RoHS StatusYes with exemptions
In-Stock:1536 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.73000$5.73
500$5.6727$2836.35
1000$5.6154$5615.4
1500$5.5581$8337.15
2000$5.5008$11001.6
2500$5.4435$13608.75

1N5552E3 Product Details

1N5552E3 Overview


In accordance with the datasheets, the forward peak voltage is [email protected] 5 is the maximum continuous forward current consumed by this device at any given time.The DC reverse voltage used for operation must be less than 660.

1N5552E3 Features


the forward peak voltage is 1.2@9A


1N5552E3 Applications


There are a lot of Microsemi
1N5552E3 applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors

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