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JANS1N5812

JANS1N5812

JANS1N5812

Microsemi

Tray

SOT-23

JANS1N5812 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Peak Reverse Repetitive Voltage (V) 50
Maximum Continuous Forward Current (A) 20
Peak Non-Repetitive Surge Current (A) 400
Peak Forward Voltage (V) 0.95
Peak Reverse Current (uA) 10
Peak Reverse Recovery Time (ns) 35
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Standard Package Name DO-203-AA
Supplier Package DO-4
Mounting Stud
Package Height 21.8(Max)
Package Length 12.81(Max)
Package Width 11.1(Max)
PCB changed 2
Lead Shape Terminal Stud
PackagingTray
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
RoHS StatusRoHS non-compliant
In-Stock:41 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$780.00000$780
500$772.2$386100
1000$764.4$764400
1500$756.6$1134900
2000$748.8$1497600
2500$741$1852500

JANS1N5812 Product Details

JANS1N5812 Overview


In the datasheets, 0.95 is stated as the peak forward voltage.A continuous forward current of 20 is the maximum consumption of this device.

JANS1N5812 Features


the forward peak voltage is 0.95


JANS1N5812 Applications


There are a lot of Microsemi
JANS1N5812 applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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