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DM2G300SH6NE

DM2G300SH6NE

DM2G300SH6NE

MagnaChip Semiconductor

DM2G300SH6NE datasheet pdf and Transistors - IGBTs - Modules product details from MagnaChip Semiconductor stock available on our website

SOT-23

DM2G300SH6NE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Typical Collector Emitter Saturation Voltage (V) 2.1
Maximum Collector-Emitter Voltage (V) 600
Maximum Power Dissipation (mW) 833000
Maximum Gate Emitter Voltage (V) ±20
Maximum Continuous Collector Current (A) 375
Maximum Gate Emitter Leakage Current (uA) 0.1
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package Case 7DM-2
Military No
Mounting Screw
Package Height 29.95(Max)
Package Length 94
Package Width 48
PCB changed 7
Part StatusUnconfirmed
Pin Count7
Configuration Dual
Channel Type N
RoHS StatusSupplier Unconfirmed
In-Stock:4145 items

About DM2G300SH6NE

The DM2G300SH6NE from MagnaChip Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features DM2G300SH6NE datasheet pdf and Transistors - IGBTs - Modules product details from MagnaChip Semiconductor stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DM2G300SH6NE, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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