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IFS100V12PT4BOSA1

IFS100V12PT4BOSA1

IFS100V12PT4BOSA1

Infineon Technologies

IFS100V12PT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IFS100V12PT4BOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature-40°C~65°C
Published 2002
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Three Phase Inverter
Halogen Free Not Halogen Free
Input Standard
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 100A
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 100A
NTC ThermistorYes
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:4122 items

Pricing & Ordering

QuantityUnit PriceExt. Price
6$348.25500$2089.53

IFS100V12PT4BOSA1 Product Details

IFS100V12PT4BOSA1 Description


IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

IFS100V12PT4BOSA1 Applications

·High Power Converters

·Motor Drives

·UPS Systems

IFS100V12PT4BOSA1 Features

·Extended Operation Temperature Tyjop

·Low Switching Losses

·Low VCEsat

·Tvjop=150

·VCEsat with positiveTemperature Coefficient

Mechanical Features

·lsolated Base Plate

·Standard Housing


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