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IXRFSM12N100

IXRFSM12N100

IXRFSM12N100

IXYS-RF

2A 1000V MOSFET IN SMPD PACKAGE

SOT-23

IXRFSM12N100 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 16-BESOP (0.790, 20.11mm Width), 15 Leads, Exposed Pad
Operating Temperature-55°C~150°C TJ
PackagingTube
Series SMPD
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 940W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.05 Ω @ 6A, 15V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2875pF @ 800V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) ±20V
In-Stock:3129 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$24.72000$24.72
30$21.01200$630.36

About IXRFSM12N100

The IXRFSM12N100 from IXYS-RF is a high-performance microcontroller designed for a wide range of embedded applications. This component features 2A 1000V MOSFET IN SMPD PACKAGE.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXRFSM12N100, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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