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GP1M009A090FH

GP1M009A090FH

GP1M009A090FH

SemiQ

MOSFET N-CH 900V 9A TO220F

SOT-23

GP1M009A090FH Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 48W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2324pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:4439 items

About GP1M009A090FH

The GP1M009A090FH from SemiQ is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 900V 9A TO220F.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the GP1M009A090FH, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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