Name: IXZ210N50L
Brand: IXYS
SKU: IXZ210N50L
Availability: InStock

new-10%

IXZ210N50L

Manufacturer part number:IXZ210N50L

Manufacturer:IXYS

Description:IXZ210N50L datasheet pdf and Transistors - FETs, MOSFETs - RF product details from IXYS stock available on our website

Case Package:SOT-23

Datasheet:IXZ210N50L Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Package / Case	6-SMD Module
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Packaging	Tube
Published	2004
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Operating Temperature	175°C
Max Power Dissipation	470W
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Frequency	175MHz
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Transistor Application	AMPLIFIER
Rise Time	4ns
Drain to Source Voltage (Vdss)	500V
Transistor Type	N-Channel
Continuous Drain Current (ID)	10A
Gain	16dB
Power - Output	200W
FET Technology	METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance	1Ohm
Voltage - Test	50V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant

IXZ210N50L Product Details

The IXZ210N50L is an N-Channel Enhancement Mode Linear 1 75MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation.

Isolated substrate
- nigh Isolation voltage (>2500V)
-excel ent themal transter
-Increased temperature and power
cycling capability
IXYS RF Low Capacitance Z-MOS^TM Process
Very low Insertion Inductance (- 2nH)
No beryllium oxide (BeO) or other hazardous materials

Technical Specifications